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See Technical Specifications

IRLML5103TR +BOM

P-Channel Silicon Transistor

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRLML5103TR
Datasheet:

IRLML5103TR Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
Current - Continuous Drain (Id) @ 25°C:

760mA (Ta)
EDA/CAD Models:

Request Free CAD Models for IRLML5103TR

IRLML5103TR General Description

Infineon Technologies' IRLML5103TR MOSFET transistor is a versatile component that is well-suited for a wide range of applications, from general purpose amplifiers to power management systems. With a maximum drain-source voltage of 20 volts and a continuous drain current of 0.6 amperes, this transistor offers reliable performance in a compact package. Its low threshold voltage of 1.0 volts and low on-resistance of 1.0 ohms make it an efficient choice for low voltage applications, helping to minimize power losses and improve overall efficiency. The SOT-23 package of the IRLML5103TR allows for space-saving designs in electronic circuits, while also providing excellent thermal performance and high reliability

Specifications

FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	Current - Continuous Drain (Id) @ 25°C	760mA (Ta)
Rds On (Max) @ Id, Vgs	600mOhm @ 600mA, 10V	Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.1 nC @ 10 V	Input Capacitance (Ciss) (Max) @ Vds	75 pF @ 25 V
Mounting Type	Surface Mount