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High Quality and Reliable INFINEON MOSFET Transistor
SOT-23-6Manufacturer:
Infineon Technologies
Mfr.Part #:
IRLMS5703TRPBF
Datasheet:
Series:
HEXFET®
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
30 V
EDA/CAD Models:
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Infineon Technologies has crafted the IRLMS5703TRPBF MOSFET with precision engineering to deliver a compact and surface-mountable solution for power management circuits. Its TO-236AB package ensures easy integration into electronic assemblies, while its wide temperature range of -55°C to 150°C guarantees reliable operation in diverse environmental conditions. Designers can trust in the performance and durability of this MOSFET for various applications requiring high-power capabilities and efficient power management
Series | HEXFET® | FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 180mOhm @ 1.6A, 10V | Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V | Power Dissipation (Max) | 1.7W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.346 | $0.35 |
10+ | $0.285 | $2.85 |
30+ | $0.260 | $7.80 |
100+ | $0.228 | $22.80 |
500+ | $0.214 | $107.00 |
1000+ | $0.205 | $205.00 |
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