Payment Method
![hsbc](/img/service-policies-hsbc.png)
![paypal](/img/service-policies-paypal.png)
![wu](/img/service-policies-wu.png)
![mg](/img/service-policies-mg.png)
Maximum voltage rating: 55 V
D-PakManufacturer:
International Rectifier
Mfr.Part #:
IRLR024NPBF
Datasheet:
Part Life Cycle Code:
Obsolete
Reach Compliance Code:
not_compliant
ECCN Code:
EAR99
Additional Feature:
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
EDA/CAD Models:
Send all BOMs to
[email protected],
or fill out the form below for a quote on IRLR024NPBF. Guaranteed response within
12hr.
Please fill in the short form below and we will provide you the quotation immediately.
The IRLR024NPBF is an exceptional N-channel MOSFET designed for high current applications, where power management and motor control are crucial. With a drain-source voltage rating of 60 volts and a continuous drain current of 17 amperes, this MOSFET is well-suited for medium to high power applications. Its low on-resistance of 0.045 ohms, gate threshold voltage of 1.0 volts, fast switching speed, and low gate charge make it an efficient choice for switching applications. The DPAK (TO-252) package type ensures good thermal performance and ease of mounting, while its RoHS compliance reflects its adherence to the latest environmental standards
Source Content uid | IRLR024NPBF | Part Life Cycle Code | Obsolete |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | Avalanche Energy Rating (Eas) | 68 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 55 V | Drain Current-Max (ID) | 17 A |
Drain-source On Resistance-Max | 0.08 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-252AA | JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 45 W | Pulsed Drain Current-Max (IDM) | 72 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | MATTE TIN OVER NICKEL | Terminal Form | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
After-Sales & Settlement Related
Payment Method
For alternative payment channels, please reach out to us at:
[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
365-Day Product
Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.189 | $0.19 |
200+ | $0.073 | $14.60 |
500+ | $0.070 | $35.00 |
1000+ | $0.069 | $69.00 |
The prices below are for reference only.
2N2222
Stmicroelectronics
1000+ $0.587
BC547
Onsemi
NPN Epitaxial Silicon Transistor
ULN2003
Onsemi
Versatile device for driving heavy loads and motor
IRF3205
Infineon
TO-220AB Tube Power Transistor with N-Channel Silicon
TAN15
Microchip
The TAN is a robust NPN transistor designed for high-frequency applications, capable of operating at up to V and continuous curren