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See Technical Specifications

IRLR8726PBF +BOM

High-power switching device for efficient energy managemen

Manufacturer:

Infineon
Mfr.Part #:

IRLR8726PBF
Datasheet:

IRLR8726PBF Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for IRLR8726PBF

IRLR8726PBF General Description

The IRLR8726PBF is a high-performance Power Field-Effect Transistor designed for a variety of applications requiring high power efficiency. With a continuous drain current rating of 86A and a low on-resistance of 0.058ohm, this N-Channel MOSFET is capable of handling high power loads with minimal losses

Key Features

Rapid thermal dissipation
Compact high-power design
Precise current control
Safe overcurrent protection

Application

Flexible power tools
Smart home appliances
Innovative DC-DC converters

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	86 A	Rds On - Drain-Source Resistance	8 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Qg - Gate Charge	15 nC
Pd - Power Dissipation	75 W	Configuration	Single
Height	2.3 mm	Length	6.5 mm
Product Type	MOSFET	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Width	6.22 mm	Part # Aliases	SP001573950
Unit Weight	0.011640 oz