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IRLS4030PBF +BOM

MOSFET 100V 1 N-Channel HEXFET with 4.3 milliohms and 87 nanoCoulombs

IRLS4030PBF General Description

N-Channel 100 V 180A (Tc) 370W (Tc) Surface Mount D2PAK

Specifications

Series HEXFET® FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 110A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 4.5 V Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 11360 pF @ 50 V Power Dissipation (Max) 370W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount

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