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See Technical Specifications

IRLU2905PBF +BOM

N-Channel 55 V 42A (Tc) Through Hole IPAK

Manufacturer:

Infineon Technologies
Mfr.Part #:

IRLU2905PBF
Datasheet:

IRLU2905PBF Datasheet (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

55 V
EDA/CAD Models:

Request Free CAD Models for IRLU2905PBF

IRLU2905PBF General Description

With its impressive specifications, the IRLU2905PBF stands out as a superior choice for power supplies, motor control systems, and high-current circuits. Its low on-resistance of 0.55 ohms ensures efficient power distribution and minimal power loss, while its maximum drain-source voltage of 55V and continuous drain current of 29A make it a robust solution for various industrial and automotive applications. Housed in a TO-251 package, this transistor offers efficient thermal dissipation and easy integration onto circuit boards. Operating at a gate threshold voltage of 1V, the IRLU2905PBF delivers consistent and reliable performance in a range of operating conditions

Key Features

Surface-mountable
High-speed switching
Rugged and reliable

Application

Power supply
Solar inverters
Industrial automation

Specifications

Series	HEXFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	42A (Tc)	Rds On (Max) @ Id, Vgs	27mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 25 V	Mounting Type	Through Hole