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See Technical Specifications

IXDN602PI +BOM

Ultrafast MOSFET Control

Manufacturer:

IXYS Corporation
Mfr.Part #:

IXDN602PI
Datasheet:

IXDN602PI Datasheet (PDF)
Programmable:

Not Verified
Driven Configuration:

Low-Side
Channel Type:

Independent
Number Of Drivers:

2
EDA/CAD Models:

Request Free CAD Models for IXDN602PI

IXDN602PI General Description

Designed for driving MOSFETs, IGBTs, and other power semiconductor devices, the IXDN602PI features two independent gate driver channels, allowing for simultaneous control of two power devices. Its TTL/CMOS compatible input logic level makes it easy to interface with digital control circuitry, while the built-in shoot-through protection ensures safe and reliable operation by preventing simultaneous conduction of the upper and lower MOSFETs

Specifications

Category	Integrated Circuits (ICs)Power Management (PMIC)Gate Drivers	Series	-
Programmable	Not Verified	Driven Configuration	Low-Side
Channel Type	Independent	Number of Drivers	2
Gate Type	IGBT, N-Channel, P-Channel MOSFET	Voltage - Supply	4.5V ~ 35V
Logic Voltage - VIL, VIH	0.8V, 3V	Current - Peak Output (Source, Sink)	2A, 2A
Input Type	Non-Inverting	Rise / Fall Time (Typ)	7.5ns, 6.5ns
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	IXDN602	feature-maximum-power-dissipation-mw
feature-packaging	Tube	feature-type	IGBT\|MOSFET
feature-rad-hard		feature-pin-count	8
feature-cecc-qualified	No	feature-esd-protection	Yes
feature-military	No	feature-aec-qualified	No
feature-aec-qualified-number		feature-auto-motive	No
feature-p-pap	No	feature-eccn-code	EAR99
feature-svhc		feature-svhc-exceeds-threshold	No