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MASW-010647-13950G +BOM

Compact and versatile RF switch module optio

MASW-010647-13950G General Description

The MASW-010647 is a monolithic, terminated Silicon PIN diode SPDT switch designed for X-Band high power, high performance applications. The switch handles greater than 20W of CW power over the 8.0-10.5 GHz frequency band. The device is an innovative solution which offers low insertion loss of 0.8 dB as well as high isolation performance of 37 dB. The MASW-010647 integrates a bias network to allow for simplified bias application and switch control. The device is also fabricated using MACOM’s patented HMIC™ process, which allows for the integration of silicon pedestals that embed series and shunt diodes in low loss, low dispersion glass. This very small chip-scale solution benefits customers by smaller size, lower number of components, and improved yield and repeatability.The device integrates bias networks and offers simplied biasing with +/- 5V operation.

MACOM Technology Solutions Inventory

Key Features

  • Low Insertion Loss
  • High Isolation
  • Low Parasitic Capacitance and Inductance
  • Fully Monolithic Die, Integrated Bias Network
  • Glass Encapsulated Construction
  • RoHS* Compliant
  • Greater than 20 W CW Power Handling @ +85°C
  • Silicon Nitride Passivation
  • Polymer Scratch Protection
  • Aerospace and Defense
MACOM Technology Solutions Original Stock

Application

  • Insertion Loss : 0.8 dB
  • Isolation: 37 dB
  • IIP3: 60 dBm
  • Min Frequency: 8,000 MHz
  • Max Frequency: 10,500 MHz

Specifications

Category RF and WirelessRF Switches Series -
RF Type - Topology -
Circuit SPDT Frequency Range 8GHz ~ 10.5GHz
Isolation 39dB Insertion Loss 0.85dB
Test Frequency 10.5GHz P1dB -
IIP3 60dBm Features -
Impedance 50Ohm Voltage - Supply 5V
Operating Temperature -40°C ~ 85°C Base Product Number MASW-010647
Product Category RF Switch ICs Technology Si
Product Type RF Switch ICs Subcategory Wireless & RF Integrated Circuits

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