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MJE13003 +BOM

High power, high voltage bipolar transistor for demanding application

Manufacturer:

Onsemi
Mfr.Part #:

MJE13003
Datasheet:

MJE13003 Datasheet (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Collector- Emitter Voltage VCEO Max:

400 V
Collector- Base Voltage VCBO:

700 V
EDA/CAD Models:

Request Free CAD Models for MJE13003

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MJE13003 General Description

The MJE13003 is a Power Transistor designed to deliver exceptional performance in high-voltage power switching applications. Its 400V NPN Bipolar construction makes it well-suited for inductive circuits where fall time is critical. Additionally, its versatility enables it to be used in SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers, and Deflection circuits at 115V and 220V. Its reliability, combined with its high power handling capabilities, make it an excellent choice for industries that require dependable and efficient power management

Key Features

Low Saturation Current at 10A and 100°C
Soft-Switching Techniques for High Efficiency
Fast Turn-Off Times for Reduced EMI
High Current Capability up to 3.5A
Safe Operating Area for IGBT and MOSFET
Pb-Free Package for Lead Free Compatibility

Application

SWITCHING

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Collector- Emitter Voltage VCEO Max	400 V
Collector- Base Voltage VCBO	700 V	Pd - Power Dissipation	1.4 W
Series	MJE13003	Continuous Collector Current	1.5 A
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	500
Subcategory	Transistors	Technology	Si
Unit Weight	0.068784 oz