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See Technical Specifications

MMBT4401WT1G +BOM

Silicon Controlled Rectifier

Manufacturer:

onsemi
Mfr.Part #:

MMBT4401WT1G
Datasheet:

MMBT4401WT1G Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for MMBT4401WT1G

MMBT4401WT1G General Description

The MMBT4401WT1G NPN Bipolar Transistor is a high-quality component that meets the demands of modern electronics. Its versatile design makes it suitable for a wide range of applications, from audio amplifiers to logic circuits. With its SOT-323/SC-70 package, this transistor is perfect for space-constrained designs that require low power consumption

Key Features

Guaranteed Reliability
Data Transfer Guaranteed
No Water or Moisture Required
Euro Electrostatic Discharge
Suitable for Medical Use
Packaging Material is Eco-Friendly

Specifications

Source Content uid	MMBT4401WT1G	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	3
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8541.21.00.75	Factory Lead Time	55 Weeks
Collector Current-Max (IC)	0.6 A	Collector-Base Capacitance-Max	6.5 pF
Collector-Emitter Voltage-Max	40 V	Configuration	SINGLE
DC Current Gain-Min (hFE)	40	JESD-30 Code	R-PDSO-G3
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	NPN
Power Dissipation Ambient-Max	0.15 W	Power Dissipation-Max (Abs)	0.15 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	250 MHz	Turn-off Time-Max (toff)	255 ns
Turn-on Time-Max (ton)	35 ns	VCEsat-Max	0.75 V