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See Technical Specifications

NDD03N80ZT4G +BOM

Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK

Manufacturer:

onsemi
Mfr.Part #:

NDD03N80ZT4G
Datasheet:

NDD03N80ZT4G Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

4
Reach Compliance Code:

not_compliant
EDA/CAD Models:

Request Free CAD Models for NDD03N80ZT4G

NDD03N80ZT4G General Description

With its 800V drain-source voltage and 2.9A continuous drain current, the NDD03N80ZT4G MOSFET is a robust and reliable choice for high-power applications. The low on-resistance of 3.7ohm and threshold voltage of 4.1V ensure efficient switching performance, while the TO-252 package and 3 pins offer easy installation and connectivity. Operating at a maximum temperature of 150°C, this transistor is suitable for demanding environments and long-term use. Its MSL 3 qualification and absence of SVHC make it a safe and dependable choice for a wide range of projects

Key Features

Fully Compliant to Industry Safety Standards
Low Power Consumption for Longer Battery Life
Suitable for IoT and Wearable Devices
Ergonomic Design for Easy Handling
Digital Signal Processing Ready
High-Speed Data Transfer Capability

Application

Modern lighting
Environmentally friendly
Cost-effective

Specifications

Source Content uid	NDD03N80ZT4G	Pbfree Code	Yes
Part Life Cycle Code	Obsolete	Pin Count	4
Reach Compliance Code	not_compliant	ECCN Code	EAR99
HTS Code	8541.29.00.95	Avalanche Energy Rating (Eas)	100 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	800 V	Drain Current-Max (ID)	1.9 A
Drain-source On Resistance-Max	4.5 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	96 W
Pulsed Drain Current-Max (IDM)	12 A	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Element Material	SILICON