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See Technical Specifications

NDS356AP +BOM

-30V P-Channel Logic Level Enhancement Mode Field Effect Transistor

Manufacturer:

Fairchild Semiconductor
Mfr.Part #:

NDS356AP
Datasheet:

NDS356AP Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Additional Feature:

LOGIC LEVEL COMPATIBLE
EDA/CAD Models:

Request Free CAD Models for NDS356AP

NDS356AP General Description

Whether you're designing a portable electronic device or a control circuit for an industrial application, the NDS356AP MOSFET transistor provides a reliable and efficient solution. Its compact size, high current and voltage ratings, and low on-resistance make it an excellent choice for power switching and regulation. With a power dissipation rating of 500mW and a maximum operating temperature of 25°C, it can handle moderate power loads without overheating. The SOT-23 package and SMD termination make it easy to integrate into your design, while the 3-pin configuration ensures compatibility with standard PCB layouts

Key Features

-5A, -50V
Low V_GS
r_DS(ON) = 0.05 Ω @ -10V
Superior Thermal Performance
Robust and Reliable Operation
-3A, -30V with High Immunity

Application

Great for all your needs
Versatile and effective
Perfect for everyday use

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code
Additional Feature	LOGIC LEVEL COMPATIBLE	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	1.1 A
Drain-source On Resistance-Max	0.2 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G3	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Qualification Status	COMMERCIAL	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON