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RF Mosfet 2 V 10 mA 12GHz 13.5dB SMD
SO-1Manufacturer:
CEL
Mfr.Part #:
NE3210S01
Datasheet:
Technology:
GaAs HJ-FET
Frequency:
12GHz
Gain:
13.5dB
Voltage - Test:
2 V
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SUPER LOW NOISE FIGURE:
0.35 dB TYP at f = 12 GHz
HIGH ASSOCIATED GAIN:
13.5 dB TYP at f = 12 GHz
GATE LENGTH: LG0.20 m
GATE WIDTH: WG = 160 m
Technology | GaAs HJ-FET | Configuration | - |
Frequency | 12GHz | Gain | 13.5dB |
Voltage - Test | 2 V | Current Rating (Amps) | 15mA |
Noise Figure | 0.35dB | Current - Test | 10 mA |
Power - Output | - | Voltage - Rated | 4 V |
Mounting Type | - |
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