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NE3503M04-A +BOM
RF JFET Transistors Low Noise HJ FET
M04-
Manufacturer:
CEL
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Mfr.Part #:
NE3503M04-A
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Datasheet:
-
Transistor Type:
HFET
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Technology:
GaAs
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Operating Frequency:
12 GHz
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Gain:
12 dB
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Availability: 7072 PCS
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NE3503M04-A General Description
RF Mosfet 2 V 10 mA 12GHz 12dB M04
Specifications
Product Category | RF JFET Transistors | Transistor Type | HFET |
Technology | GaAs | Operating Frequency | 12 GHz |
Gain | 12 dB | Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 4 V | Vgs - Gate-Source Breakdown Voltage | - 3 V |
Id - Continuous Drain Current | 70 mA | Maximum Operating Temperature | + 125 C |
Pd - Power Dissipation | 125 mW | Mounting Style | SMD/SMT |
Forward Transconductance - Min | 55 mS | Gate-Source Cutoff Voltage | - 700 mV |
NF - Noise Figure | 0.45 dB | Product | RF JFET Transistors |
Product Type | RF JFET Transistors | Factory Pack Quantity | 1 |
Subcategory | Transistors | Type | GaAs HFET |
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In Stock: 7,072
Minimum Order: 1
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