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NE3503M04-A +BOM

RF JFET Transistors Low Noise HJ FET

  • Manufacturer:

    CEL

  • Mfr.Part #:

    NE3503M04-A

  • Datasheet:

    NE3503M04-A Datasheet (PDF) pdf-icon

  • Transistor Type:

    HFET

  • Technology:

    GaAs

  • Operating Frequency:

    12 GHz

  • Gain:

    12 dB

NE3503M04-A General Description

RF Mosfet 2 V 10 mA 12GHz 12dB M04

Specifications

Product Category RF JFET Transistors Transistor Type HFET
Technology GaAs Operating Frequency 12 GHz
Gain 12 dB Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 4 V Vgs - Gate-Source Breakdown Voltage - 3 V
Id - Continuous Drain Current 70 mA Maximum Operating Temperature + 125 C
Pd - Power Dissipation 125 mW Mounting Style SMD/SMT
Forward Transconductance - Min 55 mS Gate-Source Cutoff Voltage - 700 mV
NF - Noise Figure 0.45 dB Product RF JFET Transistors
Product Type RF JFET Transistors Factory Pack Quantity 1
Subcategory Transistors Type GaAs HFET

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