This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

NP50P06SDG-E1-AY +BOM

French distributor of electronic components with a history dating back to 1988

Manufacturer:

Renesas Technology Corp
Mfr.Part #:

NP50P06SDG-E1-AY
Datasheet:

NP50P06SDG-E1-AY Datasheet (PDF)
Tags:

NP50P06SDG-E, NP50P06S, NP50P06, NP50P, NP50, NP5
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
EDA/CAD Models:

Request Free CAD Models for NP50P06SDG-E1-AY

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

NP50P06SDG-E1-AY General Description

I. The NP50P06SDG-E1-AY power MOSFET transistor is an essential component for high-speed switching applications in various power management systems. With its impressive drain-source voltage rating of 60V and continuous drain current of 50A, this transistor is well-equipped to handle high-power loads with ease. Its low on-resistance of 16.5 mΩ at a gate-source voltage of 10V makes it an efficient choice for minimizing power losses and enhancing overall system efficiency in switching applications. The gate threshold voltage of 2.5V also ensures easy compatibility with standard logic level signals, simplifying the driving process

Key Features

Power Management with Precision
Fault Detection and Recovery
Silicon Carbide Based Diode Supported

High-Speed Switching Capability
Low Power Consumption Achieved
Temperature Monitoring Available

Specifications

Tags	NP50P06SDG-E, NP50P06S, NP50P06, NP50P, NP50, NP5	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	50 A
Rds On - Drain-Source Resistance	16.5 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	1.2 W	Channel Mode	Enhancement
Configuration	Single	Fall Time	180 ns
Height	2.65 mm	Length	6.5 mm
Product Type	MOSFET	Rise Time	13 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Typical Turn-Off Delay Time	405 ns
Typical Turn-On Delay Time	13 ns	Width	6.1 mm
Unit Weight	0.011640 oz