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NP75N04YLG-E1-AY +BOM

Tape and Reel packaging for efficient production line

NP75N04YLG-E1-AY General Description

N-Channel 40 V 75A (Ta) 138W (Ta) Surface Mount 8-HSON (5x5.4)

Renesas Technology Corp Inventory

Key Features

  • Advanced gate drive and sensing technology
  • Silicon Carbide JFET with high speed switching
  • Integrated overcurrent and short circuit protection
  • High voltage DC-DC converter design support
  • Ruggedized for automotive and industrial applications
Renesas Technology Corp Original Stock
Renesas Technology Corp Inventory

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series -
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 75A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.8mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 116 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6450 pF @ 25 V
FET Feature - Power Dissipation (Max) 138W (Ta)
Operating Temperature 175°C Mounting Type Surface Mount

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