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NP100P04PDG-E1-AY +BOM

Designed for high current switching applications, the NP100P04PDG is a reliable P-channel MOS Field Effect Transistor

NP100P04PDG-E1-AY General Description

P-Channel 40 V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263

Renesas Technology Corp Inventory

Key Features

  • Advanced pulse-width modulation PWM control for precision
  • Fully protected against thermal runaway and overcurrent
  • Safe and reliable operation in harsh environments
  • Pulse-frequency modulated PFM control for enhanced precision
Renesas Technology Corp Original Stock
Renesas Technology Corp Inventory

Specifications

Product Category: MOSFET Technology: Si
Mounting Style: SMD/SMT Number of Channels: 1 Channel
Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: 40 V
Id - Continuous Drain Current: 100 A Rds On - Drain-Source Resistance: 3.5 mOhms
Vgs - Gate-Source Voltage: 20 V Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 1800 mW
Configuration: Single Channel Mode: Enhancement
Packaging: Tube Height: 4.45 mm
Length: 10 mm Transistor Type: 1 P-Channel
Width: 9.15 mm Fall Time: 100 ns
Moisture Sensitive: Yes Product Type: MOSFET
Rise Time: 30 ns Factory Pack Quantity: 800
Subcategory: MOSFETs Typical Turn-Off Delay Time: 300 ns
Typical Turn-On Delay Time: 38 ns Unit Weight: 0.077603 oz
Tags NP100P04P, NP100P04, NP100P, NP100, NP10, NP1

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Ratings and Reviews

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D
D**o 09/27/2023

Very fast delivery. Thanks.

3
F
F**l 11/21/2022

Fast shipping, everything as described

4
I
I**a 06/25/2022

14 days delivery to Western EU.All good

2
L
L**s 10/02/2021

Goods Received good quality good seller thanks Forward your Store Recommend my friend

7

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NP100P04PDG-E1-AY Datasheet PDF

Preliminary Specification NP100P04PDG-E1-AY PDF Download

NP100P04PDG-E1-AY PDF Preview

In Stock: 4,249

Minimum Order: 1

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