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See Technical Specifications

NT5CC256M16EP-DI +BOM

This item is specifically intended for OEM and CM customers, and cannot be purchased through brokers

Manufacturer:

NANYA TECHNOLOGY CORP
Mfr.Part #:

NT5CC256M16EP-DI
Datasheet:

NT5CC256M16EP-DI Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
HTS Code:

8542.32.00.36
EDA/CAD Models:

Request Free CAD Models for NT5CC256M16EP-DI

NT5CC256M16EP-DI General Description

 Basis DDR3 Compliant-8n Prefetch Architecture-Differential C lock (   and Data Strobe(DQS/   -Double data rate on DQs, DQS and DM Data Integrity-Auto Self Refresh ( A SR) by DRAM built in T S-Auto Refresh and Self Refresh Mode s Power Saving Mode-Power Down Mode Signal Integrity-Configurable DS for system compatibility-Configurable On Die Termination-ZQ Calibration for DS/ODT impedance accuracy viaexternal ZQ pad (240 ohm 1%) Signal Synchronization-Write Leveling via MR settings 5-Read Leveling via MPR Interface and Power Supply-SSTL_15 for DDR3:VDD/VDDQ= 1.5V ((±0.075V-SSTL_135 2 for DDR3L:V DD/VDDQ= 1.35V 0.067/+0.1V

Specifications

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.36
Access Mode	MULTI BANK PAGE BURST	Additional Feature	AUTO/SELF REFRESH
JESD-30 Code	R-PBGA-B96	Length	13 mm
Memory Density	4294967296 bit	Memory IC Type	DDR3L DRAM
Memory Width	16	Number of Functions	1
Number of Ports	1	Number of Terminals	96
Number of Words	268435456 words	Number of Words Code	256000000
Operating Mode	SYNCHRONOUS	Operating Temperature-Max	95 °C
Operating Temperature-Min		Organization	256MX16
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Seated Height-Max	1 mm
Self Refresh	YES	Supply Voltage-Max (Vsup)	1.45 V
Supply Voltage-Min (Vsup)	1.283 V	Supply Voltage-Nom (Vsup)	1.35 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	OTHER	Terminal Form	BALL
Terminal Pitch	0.8 mm	Terminal Position	BOTTOM
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Width	8 mm