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NT5SV16M16BS-6K +BOM

Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 INCH, LEAD AND HALOGEN FREE, PLASTIC, TSOP2-54

Key Features

High Performance: (TABLE)

Single Pulsed RAS Interface

Fully Synchronous to Positive Clock Edge

Four Banks controlled by BA0/BA1 (Bank Select)

Programmable CAS Latency: 2, 3

Programmable Burst Length: 1, 2, 4, 8

Programmable Wrap: Sequential or Interleave

Multiple Burst Read with Single Write Option

Automatic and Controlled Precharge Command

Data Mask for Read/Write control (x4, x8)

Dual Data Mask for byte control (x16)

Auto Refresh (CBR) and Self Refresh

Suspend Mode and Power Down Mode

Standard Power operation

8192 refresh cycles/64ms

Random Column Address every CK (1-N Rule)

Single 3.3V0.3V Power Supply

LVTTL compatible

Package: 54-pin 400 mil TSOP-Type II

-7K parts for PC133 2-2-2 operation

-75B parts for PC133 3-3-3 operation

-8B parts for PC100 2-2-2 operation

Specifications

Product Category Memory ICs

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Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty Warranty

We promise to provide 365 days quality assurance service for all our products.

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