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NTGD1100LT1G +BOM

Dual P-Channel Small Signal MOSFET with Level-Shift -8V, -3.3A, 55mΩ

Manufacturer:

onsemi
Mfr.Part #:

NTGD1100LT1G
Datasheet:

NTGD1100LT1G Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel, P-Channel
Number Of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for NTGD1100LT1G

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Tel: +852 95804164

NTGD1100LT1G General Description

In summary, the NTGD1100LT1G stands out as a high-quality component that delivers consistent performance in demanding applications. Its specifications and design make it a preferred choice for engineers and developers looking to enhance efficiency and reliability in their electronic designs

Key Features

This TVS diode features low leakage current and fast response time
Ideal for protecting sensitive electronics from voltage transients and surges
Maximum clamping voltage of 12V ensures reliable protection against overvoltage
Fast response time makes it suitable for use in high-speed data transfer lines
Low capacitance and low leakage current ensure reliable operation

Application

Portable Devices
Gaming Consoles
Electronic Gadgets

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel, P-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	8 V
Id - Continuous Drain Current	3.3 A	Rds On - Drain-Source Resistance	55 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	600 mV
Qg - Gate Charge	-	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	830 mW
Channel Mode	Enhancement	Series	NTGD1100L
Configuration	Dual	Height	0.94 mm
Length	3 mm	Product Type	MOSFET
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel, 1 P-Channel	Type	MOSFET
Width	1.5 mm	Unit Weight	0.000705 oz