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Bipolar (BJT) Transistor PNP 80 V 1 A 1.25 W Through Hole TO-39
CAN3Manufacturer:
Mfr.Part #:
NTE129
Datasheet:
Launch_date:
Jun 15, 2006
Last_inspection_date:
12 MAY 2023
Supplier_cage_code:
7T184
Htsusa:
8541290075
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Bipolar (BJT) Transistor PNP 80 V 1 A 1.25 W Through Hole TO-39
Description:
The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current range.
place | launch_date | Jun 15, 2006 | |
last_inspection_date | 12 MAY 2023 | supplier_cage_code | 7T184 |
htsusa | 8541290075 | schedule_b | 8541290080 |
ppap | aec | ||
Series | - | Transistor Type | PNP |
Current - Collector (Ic) (Max) | 1 A | Voltage - Collector Emitter Breakdown (Max) | 80 V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA | Current - Collector Cutoff (Max) | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V | Power - Max | 1.25 W |
Frequency - Transition | - | Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
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Received. Pending testing. very good appearance.