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NTH4L015N065SC1 +BOM
Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-4L
TO247-4-
Manufacturer:
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Mfr.Part #:
NTH4L015N065SC1
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Datasheet:
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Case Outline:
340CJ
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MSL Temp (°C):
0
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Container Type:
TUBE
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Technology:
Si
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EDA/CAD Models:
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Availability: 5655 PCS
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NTH4L015N065SC1 General Description
The cutting-edge technology behind the Silicon Carbide (SiC) MOSFET, product NTH4L015N065SC1, provides unprecedented switching performance and reliability, surpassing that of traditional Silicon-based MOSFETs. Its low ON resistance and compact chip size result in low capacitance and gate charge, ultimately leading to superior efficiency, faster operation frequency, increased power density, reduced EMI, and a smaller system size
Key Features
- High Junction Temperature
- 100% UIL Tested
- RoHS Compliant
- High Speed Switching and Low Capacitance
- 650V rated
- Max RDS(on) = 18.7 mΩ at Vgs = 18V, Id = 60A
Application
- DC-DC Converter
- Boost Inverter
Specifications
Status | Active | Case Outline | 340CJ |
MSL Temp (°C) | 0 | Container Type | TUBE |
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 650 V |
Id - Continuous Drain Current | 142 A | Rds On - Drain-Source Resistance | 18 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 22 V | Vgs th - Gate-Source Threshold Voltage | 4.3 V |
Qg - Gate Charge | 283 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 500 W |
Channel Mode | Enhancement | Product Type | MOSFET |
Factory Pack Quantity | 30 | Subcategory | MOSFETs |
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NTH4L015N065SC1 Datasheet PDF
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In Stock: 5,655
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $21.172 | $21.17 |
30+ | $20.352 | $610.56 |
The prices below are for reference only.
Fantastic!!! Received in 6 days from the moment of order.