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See Technical Specifications

R1LV0808ASB-5SI#B0 +BOM

Operating voltage of 3V for efficient power consumption

Manufacturer:

RENESAS
Mfr.Part #:

R1LV0808ASB-5SI#B0
Datasheet:

R1LV0808ASB-5SI#B0 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

44
Reach Compliance Code:

compliant
EDA/CAD Models:

Request Free CAD Models for R1LV0808ASB-5SI#B0

R1LV0808ASB-5SI#B0 General Description

Embracing Renesas's R1LV0808ASB-5SI#B0 product ensures customers receive exceptional support from the leading Low Power SRAM supplier worldwide. Renesas's dedication to providing high-quality, high-density, and high-performance RAMs is evident in their innovative technologies, including the Advanced LPSRAM memory cell concept. Customers can rely on Renesas for cutting-edge memory solutions and long-term support, making them the go-to choice for memory needs

Specifications

Source Content uid	R1LV0808ASB-5SI#B0	Pbfree Code	Yes
Part Life Cycle Code	Obsolete	Pin Count	44
Reach Compliance Code	compliant	ECCN Code	3A991.B.2.A
HTS Code	8542.32.00.41	I/O Type	COMMON
JESD-30 Code	R-PDSO-G44	Memory IC Type	STANDARD SRAM
Memory Organization	1MX8	Memory Width	8
Moisture Sensitivity Level	3	Number of Functions	1
Number of Terminals	44	Number of Words Code	1000000
Operating Mode	ASYNCHRONOUS	Output Characteristics	3-STATE
Parallel/Serial	PARALLEL	Peak Reflow Temperature (Cel)	260
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Form	GULL WING
Terminal Position	DUAL