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See Technical Specifications

S1JB-13-F +BOM

JB-13-F, 1 A, 600 V, SILICON, SIGNAL DIODE":

Manufacturer:

Diodes Inc
Mfr.Part #:

S1JB-13-F
Datasheet:

S1JB-13-F Datasheet (PDF)
Technology:

Standard
Voltage - DC Reverse (Vr) (Max):

600 V
Current - Average Rectified (Io):

1A
Voltage - Forward (Vf) (Max) @ If:

1.1 V @ 1 A
EDA/CAD Models:

Request Free CAD Models for S1JB-13-F

S1JB-13-F General Description

In summary, the S1JB-13-F chip represents a significant advancement in microcontroller technology, offering exceptional performance, reliability, and versatility. Its embedded flash memory, high-speed processing, and customizable features make it a top choice for various electronic applications, ensuring a smooth and efficient operation

Specifications

Category	Discrete Semiconductor ProductsDiodesRectifiersSingle Diodes	Series	-
Technology	Standard	Voltage - DC Reverse (Vr) (Max)	600 V
Current - Average Rectified (Io)	1A	Voltage - Forward (Vf) (Max) @ If	1.1 V @ 1 A
Speed	Standard Recovery >500ns, > 200mA (Io)	Reverse Recovery Time (trr)	3 µs
Current - Reverse Leakage @ Vr	5 µA @ 600 V	Capacitance @ Vr, F	10pF @ 4V, 1MHz
Mounting Type	Surface Mount	Operating Temperature - Junction	-65°C ~ 150°C
Base Product Number	S1J	feature-type	Switching Diode
feature-material		feature-configuration	Single
feature-peak-reverse-repetitive-voltage-v	600	feature-maximum-continuous-forward-current-a	1
feature-peak-non-repetitive-surge-current-a	30	feature-peak-forward-voltage-v	1.1
feature-peak-reverse-current-ua	5	feature-maximum-junction-ambient-thermal-resistance
feature-maximum-diode-capacitance-pf	10(Typ)	feature-maximum-power-dissipation-mw
feature-peak-reverse-recovery-time-ns	3000	feature-packaging	Tape and Reel
feature-rad-hard		feature-pin-count	2
feature-cecc-qualified	No	feature-esd-protection
feature-military	No	feature-aec-qualified	No
feature-aec-qualified-number		feature-auto-motive	No
feature-p-pap	No	feature-eccn-code	EAR99
feature-svhc	Yes	feature-svhc-exceeds-threshold	Yes