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SCT2750NYTB +BOM

N-Channel 1700 V 0.75 Ohm Surface Mount SiC Power Mosfet - TO-268-2

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

SCT2750NYTB
Datasheet:

SCT2750NYTB Datasheet (PDF)
Technology:

SiC
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SCT2750NYTB

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SCT2750NYTB General Description

The SCT2750NYTB is a powerful N-channel MOSFET transistor designed to handle high voltage applications with ease. With a continuous drain current of 6A and a drain source voltage of 1.7kV, this transistor is capable of supporting demanding power requirements. The on resistance of 0.75ohm ensures efficient operation, while the threshold voltage of 2.8V allows for precise control over the switching behavior. The TO-268 case style provides a sturdy and reliable housing for the transistor, with 2 pins for easy installation. With a maximum operating temperature of 175°C and a power dissipation of 57W, this MOSFET can withstand tough conditions without compromising performance

Specifications

Product Category:	MOSFET	Technology:	SiC
Mounting Style:	SMD/SMT	Transistor Polarity:	N-Channel
Number of Channels:	1 Channel	Vds - Drain-Source Breakdown Voltage:	1.7 kV
Id - Continuous Drain Current:	6 A	Rds On - Drain-Source Resistance:	750 mOhms
Vgs - Gate-Source Voltage:	- 6 V, + 22 V	Vgs th - Gate-Source Threshold Voltage:	1.6 V
Qg - Gate Charge:	17 nC	Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C	Pd - Power Dissipation:	57 W
Channel Mode:	Enhancement	Series:	SCT2x
Packaging:	MouseReel	Configuration:	Single
Fall Time:	63 ns	Forward Transconductance - Min:	600 mS
Product Type:	MOSFET	Rise Time:	24 ns
Factory Pack Quantity:	400	Subcategory:	MOSFETs
Transistor Type:	1 N-Channel	Typical Turn-Off Delay Time:	41 ns
Typical Turn-On Delay Time:	19 ns	Part # Aliases:	SCT2750NY
Unit Weight:	0.229281 oz