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Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 long leads package
HIP247Manufacturer:
Mfr.Part #:
SCTWA40N120G2AG
Datasheet:
ECCN (US):
EAR99
ECCN (EU):
NEC
Packing Type:
Tube
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This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Marketing Status | Active | ECCN (US) | EAR99 |
ECCN (EU) | NEC | Packing Type | Tube |
Temperature (°C) min | - | Temperature (°C) max | - |
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