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SKM200GB12E4 +BOM
N-channel insulated gate bipolar transistor with , rating
MODULE-
Manufacturer:
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Mfr.Part #:
SKM200GB12E4
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Datasheet:
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ECCN (US):
EAR99
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Automotive:
No
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PPAP:
No
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Channel Type:
N
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EDA/CAD Models:
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Availability: 5321 PCS
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Key Features
- Half-bridge switch
- IGBT4 = 4th generation medium fast Trench IGBT (Infineon)
- CAL4 = Soft switching 4th generation CAL-diode
- Integrated gate resistor
- For higher switching frequencies up to 12kHz
- UL recognized, file number E63532
Application
Power ManagementSpecifications
ECCN (US) | EAR99 | Part Status | Active |
Automotive | No | PPAP | No |
Channel Type | N | Configuration | Dual |
Typical Collector Emitter Saturation Voltage (V) | 1.8 | Maximum Collector-Emitter Voltage (V) | 1200 |
Maximum Gate Emitter Voltage (V) | ±20 | Maximum Continuous Collector Current (A) | 313 |
Minimum Operating Temperature (°C) | -40 | Maximum Operating Temperature (°C) | 175 |
Mounting | Screw | PCB changed | 7 |
Pin Count | 7 |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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In Stock: 5,321
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
The prices below are for reference only.
Went very long, 56 days. The seller sent literally during the day. To the touch, pleasant, ribbed, climb on potentiometers easily, peel tight. Because of the plastic filling thought that it would merge at the first turn, but it is not, quite strong, although metal only from the outside. Very satisfied, i will take more