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SPP11N60C2 +BOM
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
TO-220-
Manufacturer:
-
Mfr.Part #:
SPP11N60C2
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Datasheet:
-
Part Life Cycle Code:
Obsolete
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Pin Count:
3
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Reach Compliance Code:
not_compliant
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ECCN Code:
EAR99
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EDA/CAD Models:
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Availability: 6115 PCS
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SPP11N60C2 General Description
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
Specifications
Source Content uid | SPP11N60C2 | Part Life Cycle Code | Obsolete |
Pin Count | 3 | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Additional Feature | AVALANCHE RATED |
Avalanche Energy Rating (Eas) | 340 mJ | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 600 V | Drain Current-Max (ID) | 11 A |
Drain-source On Resistance-Max | 0.38 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e0 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 125 W | Pulsed Drain Current-Max (IDM) | 22 A |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Finish | TIN LEAD | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Element Material | SILICON |
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In Stock: 6,115
Minimum Order: 1
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