This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

SQ2362ES-T1_GE3 +BOM

N-channel silicon FET

Manufacturer:

Vishay
Mfr.Part #:

SQ2362ES-T1_GE3
Datasheet:

SQ2362ES-T1_GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SQ2362ES-T1_GE3

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

SQ2362ES-T1_GE3 General Description

With a single-element configuration, the SQ2362ES-T1_GE3 offers simplified circuit layouts and efficient power distribution, making it ideal for space-constrained automotive applications. Whether used in engine control modules, lighting systems, or power steering units, this transistor provides consistent performance and protection against overcurrent and overtemperature conditions

Key Features

High-temperature rated
Fully protected gate source
Automotive-grade reliable
Dual N-channel MOSFET
ESD protection built-in
Low drain-source on-resistance

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	4.3 A	Rds On - Drain-Source Resistance	68 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	7.6 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	3 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Tradename	TrenchFET	Series	SQ
Configuration	Single	Fall Time	18 ns
Product Type	MOSFET	Rise Time	20 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	14 ns
Typical Turn-On Delay Time	6 ns	Part # Aliases	SQ2362ES-T1_BE3
Unit Weight	0.000282 oz