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SUP90P06-09L-E3 +BOM

MOSFET with 60V voltage rating, 90A current capacity, 250W power dissipation, and 9.3mΩ resistance at 10V

SUP90P06-09L-E3 General Description

P-Channel 60 V 90A (Tc) 2.4W (Ta), 250W (Tc) Through Hole TO-220AB

SUP90P06-09L-E3

Key Features

  • ±20V Gate-source voltage
  • 62°C/W Junction-to-ambient free air thermal resistance
  • 0.6°C/W Junction-to-case thermal resistance

Application

  • Industrial

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series TrenchFET®
FET Type P-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9200 pF @ 25 V
FET Feature - Power Dissipation (Max) 2.4W (Ta), 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole
Base Product Number SUP90

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