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See Technical Specifications

UMF28N +BOM

Compact solution for amplifier design

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

UMF28N
Datasheet:

UMF28N Datasheet (PDF)
Transistor Type:

1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max):

100mA, 150mA
Voltage - Collector Emitter Breakdown (Max):

50V
Resistor - Base (R1):

22kOhms
EDA/CAD Models:

Request Free CAD Models for UMF28N

UMF28N General Description

Devices integrating twotransistors are availablein ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar Transistor Arrays, Pre-Biased	Series	-
Transistor Type	1 NPN Pre-Biased, 1 PNP	Current - Collector (Ic) (Max)	100mA, 150mA
Voltage - Collector Emitter Breakdown (Max)	50V	Resistor - Base (R1)	22kOhms
Resistor - Emitter Base (R2)	47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce	68 @ 5mA, 5V / 180 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA	Current - Collector Cutoff (Max)	500nA
Frequency - Transition	250MHz, 140MHz	Power - Max	150mW
Mounting Type	Surface Mount	Base Product Number	UMF28
Product Category	Bipolar Transistors - Pre-Biased	Product Type	BJTs - Bipolar Transistors - Pre-Biased
Subcategory	Transistors	Part # Aliases	UMF28NTR