This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

UMG5NTR +BOM

Product UMG5NTR is a Trans Digital Bipolar Junction Transistor (BJT) designed with an NPN configuration

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

UMG5NTR
Datasheet:

UMG5NTR Datasheet (PDF)
Transistor Type:

2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):

100mA
Voltage - Collector Emitter Breakdown (Max):

50V
Resistor - Base (R1):

10kOhms

UMG5NTR General Description

Product UMG5NTR offers a compact and efficient solution for integrating two transistors into various electronic devices. With its ultra-compact package, this product is suitable for a wide range of applications including pre-amplifier differential amplification circuits, high-frequency oscillators, and driver ICs. The small footprint of the package makes it ideal for space-constrained designs, while still offering high performance and reliability

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar Transistor Arrays, Pre-Biased	Series	-
Transistor Type	2 NPN - Pre-Biased (Dual)	Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V	Resistor - Base (R1)	10kOhms
Resistor - Emitter Base (R2)	47kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce	68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA	Current - Collector Cutoff (Max)	500nA
Frequency - Transition	250MHz	Power - Max	150mW
Mounting Type	Surface Mount	Base Product Number	UMG5
Product Category	Bipolar Transistors - Pre-Biased	Configuration	Dual Common Emitter
Transistor Polarity	NPN	Typical Input Resistor	10 kOhms
Typical Resistor Ratio	4.7	Mounting Style	SMD/SMT
DC Collector/Base Gain hfe Min	68	Collector- Emitter Voltage VCEO Max	50 V
Continuous Collector Current	100 mA	Peak DC Collector Current	100 mA
Pd - Power Dissipation	150 mW	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Height	0.77 mm
Length	2 mm	Product Type	BJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity	3000	Subcategory	Transistors
Width	1.7 mm	Part # Aliases	UMG5N