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1200V, 300A SiC Power Module meeting RoHS requirements
ModuleManufacturer:
Wolfspeed, Inc.
Mfr.Part #:
WAB300M12BM3
Datasheet:
Technology:
Silicon Carbide (SiC)
Configuration:
2 N-Channel (Half Bridge)
Drain To Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
382A (Tc)
EDA/CAD Models:
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Discrete Semiconductor Modules SiC, Module, 300A, 1200V, 62mm, BM3, Switching Optimized, Industrial, THB-80, Gen 3
Technology | Silicon Carbide (SiC) | Configuration | 2 N-Channel (Half Bridge) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) | Current - Continuous Drain (Id) @ 25°C | 382A (Tc) |
Rds On (Max) @ Id, Vgs | 5.2mOhm @ 300A, 15V | Vgs(th) (Max) @ Id | 3.6V @ 92mA |
Gate Charge (Qg) (Max) @ Vgs | 908nC @ 15V | Input Capacitance (Ciss) (Max) @ Vds | 24500pF @ 1000V |
Operating Temperature | -40°C ~ 175°C (TJ) | Mounting Type | Chassis Mount |
Base Product Number | WAB300 |
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