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See Technical Specifications

WAS300M12BM2 +BOM

Bridge Module, 1200V, 300A Discrete Semiconductor Modules BM2

Manufacturer:

Wolfspeed, Inc.
Mfr.Part #:

WAS300M12BM2
Datasheet:

WAS300M12BM2 Datasheet (PDF)
Technology:

Silicon Carbide (SiC)
Configuration:

2 N-Channel (Half Bridge)
FET Feature:

Silicon Carbide (SiC)
Drain To Source Voltage (Vdss):

1200V (1.2kV)
EDA/CAD Models:

Request Free CAD Models for WAS300M12BM2

WAS300M12BM2 General Description

One standout feature of the WAS300M12BM2 is its compact design, making it perfect for applications where space is limited. The integrated gate driver and built-in temperature sensor further enhance its usability, allowing for safe operation even under extreme temperatures. Additionally, the module boasts advanced protection functions like overcurrent and short-circuit protection, ensuring peace of mind when it comes to system reliability

Specifications

Technology	Silicon Carbide (SiC)	Configuration	2 N-Channel (Half Bridge)
FET Feature	Silicon Carbide (SiC)	Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	423A (Tc)	Rds On (Max) @ Id, Vgs	5.3mOhm @ 300A, 20V
Vgs(th) (Max) @ Id	2.5V @ 15mA	Gate Charge (Qg) (Max) @ Vgs	1025nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	19300pF @ 600V	Power - Max	1.668kW (Tc)
Operating Temperature	150°C (TJ)	Mounting Type	Chassis Mount
Base Product Number	WAS300