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FCH35N60

FCH35N60: N-Channel Power MOSFET featuring SUPERFET Technology, Easy Drive, 600V, 35A, 98mΩ, TO-247 Package

FCH35N60 General Description

SuperFET® MOSFET is the first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Key Features

  • 650V @TJ = 150°C
  • Typ. RDS(on) = 79mΩ
  • Ultra low gate charge ( Typ. Qg = 139nC )
  • Low effective output capacitance ( Typ. Coss.eff = 340pF )
  • 100% avalanche tested

Application

  • This product is general usage and suitable for many different applications.

Specifications

Product Category MOSFET REACH Details
Technology Si Mounting Style Through Hole
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V Id - Continuous Drain Current 35 A
Rds On - Drain-Source Resistance 79 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 5 V Qg - Gate Charge 139 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 312.5 W Channel Mode Enhancement
Tradename SuperFET Series FCH35N60
Configuration Single Fall Time 73 ns
Forward Transconductance - Min 28.8 S Height 20.82 mm
Length 15.87 mm Product Type MOSFET
Rise Time 120 ns Factory Pack Quantity 450
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 105 ns Typical Turn-On Delay Time 34 ns
Width 4.82 mm Unit Weight 0.211644 oz

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Availability: 7326 PCS

+BOM
Qty. Unit Price Ext. Price
1+ $5.263 $5.26
200+ $2.038 $407.60
450+ $1.965 $884.25
900+ $1.930 $1,737.00

The prices below are for reference only.