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MJD148T4

The NPN Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

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The NPN Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix)
High Gain - 50 Min @ I_C = 2.0 Amps
Low Saturation Voltage - 0.5 V @ I_C = 2.0 Amps
High Current Gain-Bandwidth Product - f_T = 3.0 MHz Min @ I_C = 250 mAdc
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
These Devices are Pb-Free and are RoHS Compliant

Mfr	onsemi	Series	-
Package	Tape & Reel (TR)	Product Status	Obsolete
Transistor Type	NPN	Current - Collector (Ic) (Max)	4 A
Voltage - Collector Emitter Breakdown (Max)	45 V	Vce Saturation (Max) @ Ib, Ic	500mV @ 200mA, 2A
Current - Collector Cutoff (Max)	20µA	DC Current Gain (hFE) (Min) @ Ic, Vce	85 @ 500mA, 1V
Power - Max	20 W	Frequency - Transition	3MHz
Operating Temperature	-65°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63	Supplier Device Package	DPAK
Base Product Number	MJD14