This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

NVMFD5483NLT3G

Dual N-Channel Power MOSFET 60V, 24A, 36mΩ

Manufacturer:

onsemi
Mfr.Part #:

NVMFD5483NLT3G
Datasheet:

NVMFD5483NLT3G Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

2 N-Channel (Dual)
FET Feature:

Logic Level Gate
Drain to Source Voltage (Vdss):

60V
EDA/CAD Models:

Request Free CAD Models for NVMFD5483NLT3G

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

NVMFD5483NLT3G General Description

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Key Features

Small Footprint (5x6 mm) for Compact Designs
Low r_DS(on) to Minimize Conduction Loss
175°C Operating Temperature
NVMFD5483NLWF − Wettable Flank Option for Enhanced Optical Inspection
AEC−Q101 Qualified and PPAP Capable

Application

Automotive

Specifications

Series	-	Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)	FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	60V	Current - Continuous Drain (Id) @ 25°C	6.4A
Rds On (Max) @ Id, Vgs	36mOhm @ 15A, 10V	Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23.4nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds	668pF @ 25V
Power - Max	3.1W	Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive	Qualification	AEC-Q101
Mounting Type	Surface Mount	Base Product Number	NVMFD5483