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SSM3K329R,LF
N-Channel 30 V 3.5A (Ta) 1W (Ta) Surface Mount SOT-23F
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Manufacturer:
Toshiba Semiconductor and Storage
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Mfr.Part #:
SSM3K329R,LF
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Datasheet:
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Part Life Cycle Code:
Not Recommended
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ECCN Code:
EAR99
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Factory Lead Time:
53 Weeks, 1 Day
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Configuration:
SINGLE WITH BUILT-IN DIODE
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EDA/CAD Models:
Availability: 7743 PCS
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SSM3K329R,LF General Description
N-Channel 30 V 3.5A (Ta) 1W (Ta) Surface Mount SOT-23F
Specifications
Source Content uid | SSM3K329R,LF | Part Life Cycle Code | Not Recommended |
Reach Compliance Code | ECCN Code | EAR99 | |
Factory Lead Time | 53 Weeks, 1 Day | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V | Drain Current-Max (ID) | 3.5 A |
Drain-source On Resistance-Max | 0.126 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDSO-F3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Surface Mount | YES | Terminal Form | FLAT |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Series | U-MOSIII | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
Rds On (Max) @ Id, Vgs | 126mOhm @ 1A, 4V | Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 4 V | Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 123 pF @ 15 V | Power Dissipation (Max) | 1W (Ta) |
Operating Temperature | 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | SSM3K329 |
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Availability: 7743 PCS
+BOMQty. | Unit Price | Ext. Price |
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