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SSS4N60B

SSS4N60B is suitable for use in rail applications where high voltage and current capabilities are required

Manufacturer:

Onsemi
Mfr.Part #:

SSS4N60B
Datasheet:

SSS4N60B Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number of Channels:

1 Channel
EDA/CAD Models:

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SSS4N60B General Description

SSS4N60B, also known as STN4N60B, is a N-channel MOSFET transistor designed for high power applications. It has a voltage rating of 600V and a continuous drain current rating of 4A. The transistor is housed in a TO-220 package, which is widely used for power transistors due to its thermal efficiency.The SSS4N60B features a low on-state resistance, which results in minimal power dissipation and high efficiency in switching applications. It also has a fast switching speed and low gate charge, making it suitable for high frequency switching circuits.The transistor is designed for use in switching power supplies, motor control, lighting applications, and other high power electronic devices. It is capable of handling high currents and voltages while maintaining stability and reliability.

Key Features

Low on-resistance
Low gate charge
Fast switching speed
High input impedance
Enhanced power dissipation
Designed for low RDS(ON)
Excellent thermal performance
TO-220 packaging
Suitable for high frequency applications
High avalanche energy capability

Application

Switched mode power supplies (SMPS)
Power factor correction circuits
Motor control circuits
Lighting applications
Telecommunication equipment
Industrial automation systems
Consumer electronics
Audio amplifiers
Power management systems

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	4 A	Rds On - Drain-Source Resistance	2.5 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	33 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	55 ns	Forward Transconductance - Min	4.7 S
Height	16.07 mm	Length	10.36 mm
Product Type	MOSFET	Rise Time	55 ns
Factory Pack Quantity	50	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	70 ns	Typical Turn-On Delay Time	20 ns
Width	4.9 mm	Part # Aliases	SSS4N60B_NL
Unit Weight	0.068784 oz