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TP65H150G4PS
MOSFET GAN FET 650V 13A TO220
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Manufacturer:
Transphorm
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Mfr.Part #:
TP65H150G4PS
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Datasheet:
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Series:
SuperGaN®
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FET Type:
N-Channel
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Technology:
GaNFET (Gallium Nitride)
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Drain to Source Voltage (Vdss):
650 V
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EDA/CAD Models:
Availability: 8723 PCS
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TP65H150G4PS General Description
N-Channel 650 V 16A (Tc) 83W (Tc) Through Hole TO-220AB
Specifications
Series | SuperGaN® | FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) | Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 16A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 180mOhm @ 8.5A, 10V | Vgs(th) (Max) @ Id | 4.8V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 598 pF @ 400 V | Power Dissipation (Max) | 83W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
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Availability: 8723 PCS
+BOMQty. | Unit Price | Ext. Price |
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1+ | - | - |
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