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2N5794U/TR +BOM

Bipolar Transistors - BJT BJTs

2N5794U/TR General Description

Bipolar (BJT) Transistor Array 2 NPN (Dual) Surface Mount 6-SMD

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Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity NPN Configuration Dual
Collector- Emitter Voltage VCEO Max 40 V Collector- Base Voltage VCBO 75 V
Emitter- Base Voltage VEBO 6 V Collector-Emitter Saturation Voltage 900 mV
Maximum DC Collector Current 600 mA Pd - Power Dissipation 600 mW
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 35 at 100 uA, 10 V DC Current Gain hFE Max 300 at 150 mA, 10 V
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 100
Subcategory Transistors Technology Si

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