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See Technical Specifications

2N6405 +BOM

Robust TO-B package ensures rugged performanc

Manufacturer:

onsemi
Mfr.Part #:

2N6405
Datasheet:

2N6405 Datasheet (PDF)
Breakover Current IBO Max:

160 A
Rated Repetitive Off-State Voltage VDRM:

800 V
Off-State Leakage Current @ VDRM IDRM:

10 uA
Vf - Forward Voltage:

1.7 V
EDA/CAD Models:

Request Free CAD Models for 2N6405

2N6405 General Description

Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 800; Max TMS Bridge Input Voltage: 10; Max DC Reverse Voltage: 2; Capacitance: 40; Package: TO-220AB

Key Features

Glass Passivated Junctions with Center Gate Geometry for Greater Parameter Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 V
These are Pb−Free Devices

Specifications

Product Category	SCRs	Breakover Current IBO Max	160 A
Rated Repetitive Off-State Voltage VDRM	800 V	Off-State Leakage Current @ VDRM IDRM	10 uA
Vf - Forward Voltage	1.7 V	Gate Trigger Voltage - Vgt	1.5 V
Gate Trigger Current - Igt	30 mA	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 125 C	Mounting Style	Through Hole
Current Rating	10 A	Height	9.28 mm
Holding Current Ih Max	40 mA	Length	10.28 mm
Non Repetitive On-State Current	160 A	Product Type	SCRs
Factory Pack Quantity	500	Subcategory	Thyristors
Type	SCR	Width	4.82 mm
Unit Weight	0.211644 oz