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2SA1162-Y(TE85L,F) +BOM

High-quality Toshiba PNP Bipolar Transistor, model 2SA1162-Y(TE85L,F), designed for applications requiring precise current and voltage specifications

2SA1162-Y(TE85L,F) General Description

Bipolar (BJT) Transistor PNP 50 V 150 mA 80MHz 150 mW Surface Mount S-Mini

Application

AMPLIFIER

Specifications

Product Category Bipolar Transistors - BJT Series 2SA1162
Product Type BJTs - Bipolar Transistors Subcategory Transistors
Technology Si Transistor Type PNP
Current - Collector (Ic) (Max) 150 mA Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 6V Power - Max 150 mW
Frequency - Transition 80MHz Operating Temperature 125°C (TJ)
Mounting Type Surface Mount Base Product Number 2SA1162

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In Stock: 7,072

Minimum Order: 1

Qty. Unit Price Ext. Price
10+ $0.067 $0.67
100+ $0.056 $5.60
300+ $0.050 $15.00
3000+ $0.046 $138.00
6000+ $0.042 $252.00
9000+ $0.041 $369.00

The prices below are for reference only.

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