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See Technical Specifications

2SC4081T106Q +BOM

Trans Gp Bjt Npn 50V 0.15A 3-Pin Umt T/r Rohs Compliant: Yes

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

2SC4081T106Q
Datasheet:

2SC4081T106Q Datasheet (PDF)
Mounting Style:

SMD/SMT
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

50 V
EDA/CAD Models:

Request Free CAD Models for 2SC4081T106Q

2SC4081T106Q General Description

The 2SC4081T106Q transistor is a high-quality NPN transistor with a collector-emitter voltage of 50V. It boasts a transition frequency of 180MHz and a power dissipation of 200mW, making it suitable for various electronic applications. With a DC collector current of 150mA and a DC current gain of 120hFE, this transistor delivers reliable performance in a compact SOT-323 case style with 3 pins. Operating at a maximum temperature of 150°C, it meets quality standards for automotive use and has a gain bandwidth of 180MHz

Key Features

1) Low Cob.

Cob=2.0pF (Typ.)

2) Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS.

Application

GENERAL PURPOSE SMALL SIGNAL AMPLIFIER

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	50 V	Collector- Base Voltage VCBO	60 V
Emitter- Base Voltage VEBO	7 V	Collector-Emitter Saturation Voltage	400 mV
Maximum DC Collector Current	150 mA	Pd - Power Dissipation	200 mW
Gain Bandwidth Product fT	180 MHz	Minimum Operating Temperature	-
Maximum Operating Temperature	+ 150 C	Series	2SC4081
Continuous Collector Current	150 mA	DC Collector/Base Gain hfe Min	120
DC Current Gain hFE Max	560	Height	0.8 mm
Length	2 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	3000	Subcategory	Transistors
Technology	Si	Width	1.25 mm
Unit Weight	0.000176 oz