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See Technical Specifications

2SJ201-Y +BOM

08-10 10-01 10-04

Manufacturer:

Toshiba
Mfr.Part #:

2SJ201-Y
Datasheet:

2SJ201-Y Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for 2SJ201-Y

2SJ201-Y General Description

Moreover, this transistor boasts a fast switching speed, characterized by a typical turn-on and turn-off time of just 20ns. This rapid response time ensures precise control over the switching operation, enhancing overall performance. Additionally, its high forward transfer admittance guarantees high gain and low distortion in amplifier configurations, making it a solid choice for audio and signal processing applications

Key Features

Advanced thermal management
Reduced electromagnetic radiation
Long-term stable performance

Application

For audio enthusiasts
Efficient power control
Smooth motor operation

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	200 V
Id - Continuous Drain Current	12 A	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	150 W	Channel Mode	Enhancement
Series	2SJ201	Configuration	Single
Fall Time	150 ns	Height	15.1 mm
Length	10.16 mm	Product Type	MOSFET
Rise Time	100 ns	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Width	4.45 mm
Unit Weight	0.068784 oz