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APT150GN120J +BOM
1200V Field Stop IGBT.
ISOTOPFONT-
Manufacturer:
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Mfr.Part #:
APT150GN120J
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Datasheet:
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IGBT Type:
Trench Field Stop
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Configuration:
Single
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Voltage - Collector Emitter Breakdown (Max):
1200 V
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Current - Collector (Ic) (Max):
215 A
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EDA/CAD Models:
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APT150GN120J General Description
The APT150GN120J is a part of Microchip's IGBT-FIELDSTOP-1200V family, which offers ultra low VCE(ON) and is designed to meet the requirements of high-voltage and high-power applications. In addition to the APT150GN120J, Microchip's IGBT product range includes six product series that utilize Non-Punch-Through (NPT), Punch-Through (PT), and field stop technologies, catering to a wide range of power supply needs
Key Features
Specifications
Category | Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules | Series | - |
IGBT Type | Trench Field Stop | Configuration | Single |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | Current - Collector (Ic) (Max) | 215 A |
Power - Max | 625 W | Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 150A |
Current - Collector Cutoff (Max) | 100 µA | Input Capacitance (Cies) @ Vce | 9.5 nF @ 25 V |
Input | Standard | NTC Thermistor | No |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Chassis Mount |
Base Product Number | APT150 | Product Type | Discrete IGBT |
Power Dissipation (W) [max] | 195 - 960 | Collector Current (dc) (A) [max] | 22 - 100 |
feature-technology | Field Stop|Trench | feature-channel-type | N |
feature-configuration | Single Dual Emitter | feature-maximum-gate-emitter-voltage-v | ±30 |
feature-maximum-collector-emitter-voltage-v | 1200 | feature-maximum-continuous-collector-current-a | 215 |
feature-maximum-power-dissipation-mw | 625 | feature-packaging | Tube |
feature-pin-count | 4 | feature-cecc-qualified | No |
feature-esd-protection | feature-military | No | |
feature-aec-qualified | No | feature-auto-motive | No |
feature-p-pap | No | feature-eccn-code | EAR99 |
feature-svhc-exceeds-threshold | No |
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