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See Technical Specifications

APT45GP120J +BOM

1200V Punch-Thru IGBT.

Manufacturer:

Microchip Technology, Inc
Mfr.Part #:

APT45GP120J
Datasheet:

APT45GP120J Datasheet (PDF)
Power Dissipation (W) [max]:

250 - 1042
Collector Current (dc) (A) [max]:

20 - 91
Feature-packaging:

Tube
Feature-pin-count:

4
EDA/CAD Models:

Request Free CAD Models for APT45GP120J

APT45GP120J General Description

IGBT products from Microchip provide high-quality solutions for awide range of high-voltage and high-power applications. The switching frequencyrange spans from DC for minimal conduction loss to 150 kHz forvery-high-power-density Switch Mode Power Supply (SMPS) applications. There are sixproduct series that utilize three different IGBT technologies:Non-Punch-Through (NPT), Punch-Through (PT) and field stop. All standard IGBT products are available as a single IGBT or as aCombi product packaged with an anti-parallel DQ series diode.

Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications.

Key Features

Microchip Technology, Inc Original Stock

Specifications

Product Type	Discrete IGBT	Power Dissipation (W) [max]	250 - 1042
Collector Current (dc) (A) [max]	20 - 91	feature-technology
feature-channel-type		feature-configuration
feature-maximum-gate-emitter-voltage-v		feature-maximum-collector-emitter-voltage-v
feature-maximum-continuous-collector-current-a		feature-maximum-power-dissipation-mw
feature-packaging	Tube	feature-pin-count	4
feature-cecc-qualified	No	feature-esd-protection
feature-military	No	feature-aec-qualified	No
feature-auto-motive	No	feature-p-pap	No
feature-eccn-code	EAR99	feature-svhc-exceeds-threshold	No