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APTGT200A120G +BOM

High-power electronic module for efficient power control and conversio

APTGT200A120G General Description

IGBT Module Trench Field Stop Half Bridge 1200 V 280 A 890 W Chassis Mount SP6

Microchip Technology, Inc Inventory

Key Features

  • Configuration: Phase leg
  • VCES (V): 1200
  • VCESat (V): 1.7
  • Current (A)>
  • Silicon type: TRENCH 3 IGBT
  • Package: SP6C
  • Configuration: Phase leg
  • VCES (V): 1200
  • VCESat (V): 1.7
  • Current (A)>
  • Silicon type: TRENCH 3 IGBT
  • Package: SP6C
Microchip Technology, Inc Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules Series -
IGBT Type Trench Field Stop Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200 V Current - Collector (Ic) (Max) 280 A
Power - Max 890 W Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 200A
Current - Collector Cutoff (Max) 350 µA Input Capacitance (Cies) @ Vce 14 nF @ 25 V
Input Standard NTC Thermistor No
Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount
Base Product Number APTGT200

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