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BDW51C +BOM

Si, SMALL SIGNAL TRANSISTOR, TO-3

BDW51C General Description

DESCRIPTION:The CENTRAL SEMICONDUCTOR 2N6674, 2N6675 types are NPN Silicon Triple Diffused Mesa Power Transistors designed for high voltage switching applications.MARKING: FULL PART NUMBER

Specifications

Source Content uid BDW51C Part Life Cycle Code Obsolete
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8541.29.00.95 Case Connection COLLECTOR
Collector Current-Max (IC) 15 A Configuration SINGLE
DC Current Gain-Min (hFE) 20 JEDEC-95 Code TO-3
JESD-30 Code O-MBFM-P2 Number of Elements 1
Number of Terminals 2 Operating Temperature-Max 200 °C
Polarity/Channel Type NPN Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 125 W Qualification Status Not Qualified
Surface Mount NO Terminal Form PIN/PEG
Terminal Position BOTTOM Transistor Application SWITCHING
Transistor Element Material SILICON Transition Frequency-Nom (fT) 3 MHz

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