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BFG235: Bipolar Junction Transistor (BJT) - A semiconductor device for amplifying or switching electronic signals
SOT-223-4Manufacturer:
Infineon
Mfr.Part #:
BFG235
Datasheet:
Mounting Style:
SMD/SMT
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
15 V
EDA/CAD Models:
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Housed in a convenient SOT-223 package, the BFG235 ensures easy mounting and effective heat dissipation during operation. Its low noise figure and high gain characteristics make it an ideal choice for low-noise amplifiers, where signal clarity is essential. Additionally, the BFG235 is RoHS compliant and lead-free, aligning with environmental standards and promoting sustainability in electronic design practices
Product Category | Bipolar Transistors - BJT | Mounting Style | SMD/SMT |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 15 V | Collector- Base Voltage VCBO | 25 V |
Emitter- Base Voltage VEBO | 2 V | Maximum DC Collector Current | 300 mA |
Pd - Power Dissipation | 2 W | Gain Bandwidth Product fT | 5.5 GHz |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 150 C |
Continuous Collector Current | 300 mA | Height | 1.6 mm |
Length | 6.5 mm | Product Type | BJTs - Bipolar Transistors |
Subcategory | Transistors | Technology | Si |
Width | 3.5 mm | Unit Weight | 0.006632 oz |
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